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HYB39S512160AT-7.5 参数 Datasheet PDF下载

HYB39S512160AT-7.5图片预览
型号: HYB39S512160AT-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: 512兆位同步DRAM [512-Mbit Synchronous DRAM]
分类和应用: 内存集成电路光电二极管动态存储器时钟
文件页数/大小: 21 页 / 1153 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[I/B]39S512[40/80/16]0A[E/T]  
512-Mbit Synchronous DRAM  
1
Overview  
This chapter lists all main features of the product family HY[I/B]39S512[40/80/16]0A[E/T] and the ordering information.  
1.1  
Features  
Fully Synchronous to Positive Clock Edge  
0 to 70 °C Operating Temperature for HYB...  
-40 to 85 °C Operating Temperature for HYI...  
Four Banks controlled by BA0 & BA1  
Data Mask for Byte Control (x16)  
Auto Refresh (CBR) and Self Refresh  
Power Down and Clock Suspend Mode  
8192 refresh cycles / 64 ms (7.8 µs)  
Random Column Address every CLK (1-N Rule)  
Single 3.3 V ± 0.3 V Power Supply  
LVTTL Interface  
Programmable CAS Latency: 2 & 3  
Programmable Wrap Sequence: Sequential or Interleave  
Programmable Burst Length: 1, 2, 4, 8 and full page  
Multiple Burst Read with Single Write Operation  
Automatic and Controlled Precharge Command  
Data Mask for Read / Write control (x4, x8, x16)  
Plastic Package : P(G)-TSOPII-54  
RoHS compliant product  
TABLE 1  
Performance  
Product Type Speed Code  
–7.5  
Unit  
Speed Grade  
PC133–3331)  
Max. Clock Frequency  
@CL3  
@CL2  
fCK3  
tCK3  
tAC3  
tCK2  
tAC2  
133  
7.5  
5.4  
10  
MHz  
ns  
ns  
ns  
6
ns  
1) Max. Frequency CL/tRCD / tRP  
Rev. 1.52, 2007-06  
3
03292006-6Y91-0T2Z