Internet Data Sheet
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)
256-MBit Synchronous DRAM
Parameter
Symbol
Self Refresh Current (standard components)
IDD6
Self Refresh Mode, CKE=0.2V, tCK=infinity
Self Refresh Current (low power components)
Self Refresh Mode, CKE=0.2V, tCK=infinity
TABLE 12
DD Specifications and Conditions
I
Symbol
–6
–7
Unit Note/ Test Condition1)2)
Max.
100 80
3)4)
IDD1
t
RC = tRC(min), IO = 0 mA
mA
2)
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
CS =VIH (min.), CKE ≤VIL(max)
CS =VIH (min.), CKE≥ VIH(min)
CS = VIH(min), CKE ≥VIH(min.)
CS = VIH(min), CKE ≤ VIL(max.)
2
2
mA
2)
26
40
5
22
35
5
mA
2)
mA
2)
mA
2)3)
65
57
mA
5)
IDD5
t
t
RFC = tRFC(min)
RFC= 7.8 μs
168 142 mA
25
3
25
3
mA
IDD6
mA Standard components
1.05 1.05 mA Low power components 6)
1) Currents values will be added when available.
2) TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V
3) These parameters depend on the cycle rate. All values are measured at 166 MHz for -6, at 133 MHz for -7 and -7.5 and at 100 MHz for -
8 components with the outputs open. Input signals are changed once during tCK
.
4) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and
the VDDQ current is excluded.
5)
tRFC = tRFC(min) “burst refresh”, tRFC =7.8 μs “distributed refresh“
6) 1.05 mA at 85 °C, 1.00 mA at 60 °C
Rev. 1.42, 2007-09
18
03292006-TMTK-JFEU