Internet Data Sheet
HY[B/I]39S256[40/80/16][0/7]F[E/T/F](L)
256-MBit Synchronous DRAM
TABLE 9
DC Characteristics
Parameter
Symbol
Values
Unit Note1)/
Test Condition
Min. Max.
2)
Supply Voltage
VDD
VDDQ
VIH
3.0 3.6
3.0 3.6
V
V
2)
I/O Supply Voltage
2)3)
2)3)
2)
Input high voltage
2.0
VDDQ + 0.3 V
Input low voltage
VIL
– 0.3 +0.8
V
Output high voltage (IOUT = – 4.0 mA)
Output low voltage (IOUT = 4.0 mA)
VOH
VOL
2.4
–
–
V
2)
0.4
V
Input leakage current, any input (0 V < VIN < VDD, all other inputs = 0 V) IIL
– 5 +5
– 5 +5
μA
μA
–
–
Output leakage current (DQs are disabled, 0 V < VOUT < VDDQ
)
IOL
1) TA = 0 to 70 °C
2) All voltages are referenced to VSS
3)
V
IH may overshoot to VDDQ + 2.0 V for pulse width of < 4ns with 3.3 V. VIL may undershoot to -2.0 V for pulse width < 4.0 ns with 3.3 V.
Pulse width measured at 50% points with amplitude measured peak to DC reference.
TABLE 10
Input and Output Capacitances
Parameter
Symbol
Values1)
Unit
Note
Min.
Max.
2)
Input Capacitances: CK
CI1
CI2
2.5
2.5
3.5
3.8
pF
pF
Input Capacitance
(A0-A12, BA0, BA1, RAS, CAS, WE, CS, CKE, DQM)
Input/Output Capacitance (DQ)
CI0
4.0
6.0
pF
1) Capacitance values are shown for TSOP-54 packages. Capacitance values for TFBGA packages are lower by 0.5 pF
2) TA = 0 to 70 °C; VDD,VDDQ = 3.3 V ± 0.3 V, f = 1 MHz
TABLE 11
IDD Conditions
Parameter
Symbol
Operating Current
IDD1
One bank active, Burst length = 1
Precharge Standby Current in Power Down Mode
Recharge Standby Current in Non-Power Down Mode
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
No Operating Current
Active state (max. 4 banks)
Burst Operating Current
Read command cycling
Auto Refresh Current
IDD5
Auto Refresh command cycling
Rev. 1.42, 2007-09
17
03292006-TMTK-JFEU