Data Sheet
HY[B/I]39S128[40/80/16][0/7]F[E/T](L)
128-MBit Synchronous DRAM
TABLE 11
IDD Conditions
Parameter
Symbol
Operating Current
IDD1
One bank active, Burst length = 1
Precharge Standby Current in Power Down Mode
Recharge Standby Current in Non-Power Down Mode
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
No Operating Current
Active state (max. 4 banks)
Burst Operating Current
Read command cycling
Auto Refresh Current
Auto Refresh command cycling
IDD5
IDD6
Self Refresh Current (standard components)
Self Refresh Mode, CKE=0.2 V, tCK=infinity
Self Refresh Current (low power components)
Self Refresh Mode, CKE=0.2 V, tCK=infinity
TABLE 12
DD Specifications and Conditions
I
Symbol
–7
Unit
Note/ Test Condition
Max.
1)2)3)4)
1)2)
IDD1
t
RC = tRC(min), IO = 0 mA
80
2
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
IDD2P
IDD2N
IDD3N
IDD3P
IDD4
CS =VIH (min.), CKE ≤VIL(max)
CS =VIH (min.), CKE≥ VIH(min)
CS = VIH(min), CKE ≥VIH(min.)
CS = VIH(min), CKE ≤ VIL(max.)
1)2)
22
35
5
1)2)
1)2)
1)2)4)
1)2)5)
1)2)
65
146
25
3
IDD5
t
t
RFC= tRFC(min)
RFC= 15.6 μs
IDD6
1)2) Standard components
1) Low power components at 85 °C
0.8
1) Currents values will be added when available.
2) TA = 0 to 70 °C; VSS = 0 V; VDD, VDDQ = 3.3 V ± 0.3 V
3) These parameters depend on the cycle rate. All values are measured at 133 MHz for -7 with the outputs open. Input signals are changed
once during tCK
.
4) These parameters are measured with continuous data stream during read access and all DQ toggling. CL=3 and BL=4 is assumed and
the VDDQ current is excluded.
5)
tRFC= tRFC(min) “burst refresh”, tRFC= 15.6 μs “distributed refresh”.
Rev. 1.32, 2007-10
14
10122006-I6LJ-WV3H