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HYB25DC512160CE-6 参数 Datasheet PDF下载

HYB25DC512160CE-6图片预览
型号: HYB25DC512160CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 512 - Mbit的双数据速率SDRAM [512-Mbit Double-Data-Rate SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率
文件页数/大小: 35 页 / 1891 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25DC512[800/160]C[E/F]  
512-Mbit Double-Data-Rate SDRAM  
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TABLE 6  
Mode Register Definition  
Field  
Bits  
Type1) Description  
Burst Length  
BL  
[2:0]  
W
Number of sequential bits per DQ related to one read/write command.  
Note: All other bit combinations are RESERVED.  
001B  
010B  
011B  
2
4
8
BT  
CL  
3
Burst Type  
See Table 7 for internal address sequence of low order address bits.  
0 Sequential  
1 Interleaved  
[6:4]  
CAS Latency  
Number of full clocks from read command to first data valid window.  
Note: All other bit combinations are RESERVED.  
010B  
011B  
2
3
110B 2.5  
101B 1.5  
Note: CL = 1.5 for DDR200 components only  
Operating Mode  
MODE [12:7]  
Note: All other bit combinations are RESERVED.  
000000 Normal Operation without DLL Reset  
000010 Normal Operation with DLL Reset  
1) W = write only register bit  
Rev. 1.3, 2006-12  
12  
03292006-W2FE-ELDX  
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