欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB25D512160BE-5 参数 Datasheet PDF下载

HYB25D512160BE-5图片预览
型号: HYB25D512160BE-5
PDF下载: 下载PDF文件 查看货源
内容描述: [DDR DRAM, 32MX16, 0.5ns, CMOS, PDSO66, GREEN, PLASTIC, TSOP2-66]
分类和应用: 时钟动态存储器双倍数据速率光电二极管内存集成电路
文件页数/大小: 37 页 / 1337 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB25D512160BE-5的Datasheet PDF文件第3页浏览型号HYB25D512160BE-5的Datasheet PDF文件第4页浏览型号HYB25D512160BE-5的Datasheet PDF文件第5页浏览型号HYB25D512160BE-5的Datasheet PDF文件第6页浏览型号HYB25D512160BE-5的Datasheet PDF文件第8页浏览型号HYB25D512160BE-5的Datasheet PDF文件第9页浏览型号HYB25D512160BE-5的Datasheet PDF文件第10页浏览型号HYB25D512160BE-5的Datasheet PDF文件第11页  
Internet Data Sheet  
HYB25D512[40/16/80]0B[E/F/C/T](L)  
Double-Data-Rate SDRAM  
2
Pin Configuration  
The pin configuration of a DDR SDRAM is listed by function in Table 4 (60 pins). The abbreviations used in the Pin#/Buffer#  
column are explained in Table 5 and Table 6 respectively. The pin numbering for FBGA is depicted in Figure 1 and that of the  
TSOP package in Figure 2  
TABLE 4  
Pin Configuration of DDR SDRAM  
Ball#/Pin#  
Name  
Pin  
Type  
Buffer  
Type  
Function  
Clock Signals  
G2, 45  
CK  
I
SSTL  
Clock Signal  
Note: CK and CK are differential clock inputs. All address and control  
input signals are sampled on the crossing of the positive edge of  
CK and negative edge of CK. Output (read) data is referenced to  
the crossings of CK and CK (both directions of crossing).  
G3, 46  
H3, 44  
CK  
I
I
SSTL  
SSTL  
Complementary Clock Signal  
CKE  
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal  
clock signals and device input buffers and output drivers. Taking CKE  
Low provides Precharge Power-Down and Self Refresh operation (all  
banks idle), or Active Power-Down (row Active in any bank). CKE is  
synchronous for power down entry and exit, and for self refresh entry.  
CKE is asynchronous for self refresh exit. CKE must be maintained high  
throughout read and write accesses. Input buffers, excluding CK, CK and  
CKE are disabled during power-down. Input buffers, excluding CKE, are  
disabled during self refresh. CKE is an SSTL_2 input, but will detect an  
LVCMOS LOW level after VDD is applied on first power up. After VREF has  
become stable during the power on and initialization sequence, it must  
be mantained for proper operation of the CKE receiver. For proper self-  
refresh entry and exit, VREF must be mantained to this input.  
Control Signals  
H7, 23  
RAS  
CAS  
WE  
I
I
I
I
SSTL  
SSTL  
SSTL  
SSTL  
Row Address Strobe  
Column Address Strobe  
Write Enable  
G8, 22  
G7, 21  
H8, 24  
CS  
Chip Select  
Note: All commands are masked when CS is registered HIGH. CS  
provides for external bank selection on systems with multiple  
banks. CS is considered part of the command code. The standard  
pinout includes one CS pin.  
Address Signals  
J8, 26  
J7, 27  
BA0  
BA1  
I
I
SSTL  
SSTL  
Bank Address Bus 2:0  
Note: BA0 and BA1 define to which bank an Active, Read, Write or  
Precharge command is being applied. BA0 and BA1 also  
determines if the mode register or extended mode register is to be  
accessed during a MRS or EMRS cycle.  
Rev. 1.70, 2007-11  
7
03062006-PFFJ-YJY2