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HYB25D512400CE-6 参数 Datasheet PDF下载

HYB25D512400CE-6图片预览
型号: HYB25D512400CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: DDR SDRAM [DDR SDRAM]
分类和应用: 存储内存集成电路光电二极管动态存储器双倍数据速率时钟
文件页数/大小: 37 页 / 1880 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D512[400/160/800]C[E/T/F/C](L)  
512-Mbit Double-Data-Rate SDRAM  
TABLE 12  
Truth Table 2: Clock Enable (CKE)  
Current State CKE n-1  
CKEn  
Command n  
Action n  
Note  
Previous Current  
Cycle  
Cycle  
1)  
2)  
Self Refresh  
Self Refresh  
Power Down  
Power Down  
All Banks Idle  
All Banks Idle  
Bank(s) Active  
L
L
X
Maintain Self-Refresh  
Exit Self-Refresh  
L
H
L
Deselect or NOP  
X
L
Maintain Power-Down  
Exit Power-Down  
L
H
L
Deselect or NOP  
Deselect or NOP  
AUTO REFRESH  
Deselect or NOP  
See Table 13  
H
H
H
H
Precharge Power-Down Entry  
Self Refresh Entry  
Active Power-Down Entry  
L
L
H
1) VREF must be maintained during Self Refresh operation  
2) Deselect or NOP commands should be issued on any clock edges occurring during the Self Refresh Exit (VXSNR) period. A minimum of  
200 clock cycles are needed before applying a read command to allow the DLL to lock to the input clock.  
1. CKEn is the logic state of CKE at clock edge n: CKE n-1 was the state of CKE at the previous clock edge.  
2. Current state is the state of the DDR SDRAM immediately prior to clock edge n.  
3. COMMAND n is the command registered at clock edge n, and ACTION n is a result of COMMAND n.  
4. All states and sequences not shown are illegal or reserved.  
Rev. 1.31, 2006-09  
19  
03292006-3TFJ-HNV3  
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