HYB25D256[400/800/160]B[T/C](L)
256-Mbit Double Data Rate SDRAM
Electrical Characteristics
4.2
Normal Strength Pull-down and Pull-up Characteristics
1. The nominal pulldown V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the
inner bounding lines of the V-I curve.
2. The full variation in driver pulldown current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
3. The nominal pullup V-I curve for DDR SDRAM devices is expected, but not guaranteed, to lie within the inner
bounding lines of the V-I curve.
4. The full variation in driver pullup current from minimum to maximum process, temperature, and voltage lie
within the outer bounding lines of the V-I curve.
5. The full variation in the ratio of the maximum to minimum pullup and pulldown current does not exceed 1.7, for
device drain to source voltages from 0.1 to 1.0.
6. The full variation in the ratio of the nominal pullup to pulldown current should be unity ± 10%, for device drain
to source voltages from 0.1 to 1.0 V.
140
Maximum
120
100
Nominal High
80
60
40
Nominal Low
Minimum
20
0
0
0.5
1
1.5
2
2.5
VDDQ - VOUT (V)
Figure 33 Normal Strength Pull-down Characteristics
0
-20
-40
-60
-80
Minimum
Nominal Low
-100
-120
-140
-160
Nominal High
Maximum
0
0.5
1
1.5
2
2.5
VDDQ - Vout(V)
Figure 34 Normal Strength Pull-up Characteristics
Data Sheet
56
Rev. 1.21, 2004-07
02102004-TSR1-4ZWW
QIMONDA [ QIMONDA AG ]
