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HYB25D128400CE-6 参数 Datasheet PDF下载

HYB25D128400CE-6图片预览
型号: HYB25D128400CE-6
PDF下载: 下载PDF文件 查看货源
内容描述: 128 - Mbit的双数据速率SDRAM [128-Mbit Double-Data-Rate SDRAM]
分类和应用: 动态存储器
文件页数/大小: 35 页 / 1979 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB25D128xxxC[C/E/F/T](L)  
128-Mbit Double-Data-Rate SDRAM  
TABLE 17  
Input and Output Capacitances  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note/  
Test Condition  
Min.  
Max.  
Input Capacitance: CK, CK  
CI1  
1.5  
2.0  
2.5  
3.0  
0.25  
2.5  
3.0  
0.5  
pF  
pF  
pF  
pF  
pF  
pF  
P(G)-TFBGA-60 1)  
P(G)-TSOPII-66  
Delta Input Capacitance  
CdI1  
CI2  
Input Capacitance: All other input-only pins  
1.5  
2.0  
P(G)-TFBGA-60  
P(G)-TSOPII-66  
Delta Input Capacitance: All other input-only CdIO  
pins  
Input/Output Capacitance: DQ, DQS, DM  
CIO  
3.5  
4.0  
4.5  
5.0  
0.5  
pF  
pF  
pF  
P(G)-TFBGA-60 2)  
P(G)-TSOPII-66  
Delta Input/Output Capacitance: DQ, DQS,  
DM  
CdIO  
1) These values are not subject to production test - verified by design/characterization and are tested on a sample base only. VDDQ = VDD  
2.5 V ± 0.2 V, f = 100 MHz, TA = 25 °C, VOUT(DC) = VDDQ/2, VOUT (Peak to Peak) 0.2 V. Unused pins are tied to ground.  
=
2) DM inputs are grouped with I/O pins reflecting the fact that they are matched in loading to DQ and DQS to facilitate trace matching at the  
board level.  
Rev. 1.6, 2007-02  
21  
03292006-U5AN-6TI1  
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