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HYB18T256400BF-3S 参数 Datasheet PDF下载

HYB18T256400BF-3S图片预览
型号: HYB18T256400BF-3S
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位双数据速率 - 双SDRAM的 [256-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 存储内存集成电路动态存储器双倍数据速率时钟
文件页数/大小: 71 页 / 4102 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T256[40/80/16]0B[C/F](L)  
256-Mbit Double-Data-Rate-Two SDRAM  
Field Bits  
Type1)  
Description  
Partial Self Refresh for 8 banks  
PASR [2:0]  
w
Address Bus, Partial Array Self Refresh for 8 Banks3)  
Note: Only for 1G and 2G components  
000B PASR0 Full Array  
001B PASR1 Half Array (BA[2:0]=000, 001, 010 & 011)  
010B PASR2 Quarter Array (BA[2:0]=000, 001)  
011B PASR3 1/8 array (BA[2:0] = 000)  
100B PASR4 3/4 array (BA[2:0]= 010, 011, 100, 101, 110 & 111)  
101B PASR5 Half array (BA[2:0]=100, 101, 110 & 111)  
110B PASR6 Quarter array (BA[2:0]= 110 & 111)  
111B PASR7 1/8 array(BA[2:0]=111)  
1) w = write only  
2) When DRAM is operated at 85°C TCase 95°C the extended self refresh rate must be enabled by setting bit A7 to "1" before the self  
refresh mode can be entered.  
3) If PASR (Partial Array Self Refresh) is enabled, data located in areas of the array beyond the specified location will be lost if self refresh  
is entered. Data integrity will be maintained if tREF conditions are met and no Self Refresh command is issued  
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TABLE 21  
EMR(3) Programming Extended Mode Register Definition(BA[2:0]=011B)  
Field  
Bits  
Type1)  
Description  
BA2  
16  
reg.addr  
Bank Address[2]  
Note: BA2 is not available on 256Mbit and 512Mbit components  
0B  
BA2 Bank Address  
BA1  
BA0  
A
15  
Bank Adress[1]  
1B  
BA1 Bank Address  
14  
Bank Adress[0]  
1B  
BA0 Bank Address  
[13:0]  
w
Address Bus[13:0]  
Note: A13 is not available for 256 Mbit and x16 512 Mbit configuration  
00000000000000BA[13:0] Address bits  
1) w = write only  
Rev. 1.11, 2007-07  
25  
11172006-LBIU-F1TN  
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