欢迎访问ic37.com |
会员登录 免费注册
发布采购

HYB18TC256800BF-2.5 参数 Datasheet PDF下载

HYB18TC256800BF-2.5图片预览
型号: HYB18TC256800BF-2.5
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆位双数据速率 - 双SDRAM的 [256-Mbit Double-Data-Rate-Two SDRAM]
分类和应用: 动态存储器
文件页数/大小: 62 页 / 3539 K
品牌: QIMONDA [ QIMONDA AG ]
 浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第50页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第51页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第52页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第53页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第55页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第56页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第57页浏览型号HYB18TC256800BF-2.5的Datasheet PDF文件第58页  
Internet Data Sheet  
HYB18TC256[80/16]0BF  
256-Mbit Double-Data-Rate-Two SDRAM  
TABLE 54  
ODT AC Characteristics and Operating Conditions for DDR2-667 and DDR2-800  
Symbol  
Parameter / Condition  
Values  
Unit  
Note  
Min.  
Max.  
1)  
tAOND  
tAON  
ODT turn-on delay  
2
2
nCK  
ns  
1)2)  
1)  
ODT turn-on  
tAC.MIN  
tAC.MAX + 0.7 ns  
tAONPD  
tAOFD  
tAOF  
ODT turn-on (Power-Down Modes)  
ODT turn-off delay  
t
AC.MIN + 2 ns  
2 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
2.5  
2.5  
nCK  
ns  
1)3)  
1)  
ODT turn-off  
tAC.MIN  
tAC.MAX + 0.6 ns  
tAOFPD  
tANPD  
tAXPD  
ODT turn-off (Power-Down Modes)  
ODT to Power Down Mode Entry Latency  
ODT Power Down Exit Latency  
t
AC.MIN + 2 ns  
2.5 tCK +  
t
AC.MAX + 1 ns  
ns  
1)  
3
8
nCK  
nCK  
1)  
1) New units, “tCK.AVG” and “nCK”, are introduced in DDR2-667 and DDR2-800. Unit “tCK.AVG” represents the actual tCK.AVG of the input clock  
under operation. Unit “nCK” represents one clock cycle of the input clock, counting the actual clock edges. Note that in DDR2-400 and  
DDR2-533, “tCK” is used for both concepts. Example: tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may  
be registered at Tm + 2, even if (Tm + 2 - Tm) is 2 x tCK.AVG + tERR.2PER(Min)  
.
2) ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when  
the ODT resistance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-667/800, tAOND is  
2 clock cycles after the clock edge that registered a first ODT HIGH counting the actual input clock edges.  
3) ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance.  
Both are measured from tAOFD, which is interpreted differently per speed bin. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5  
ns (= 0.5 x 3 ns) after the second trailing clock edge counting from the clock edge that registered a first ODT LOW and by counting the  
actual input clock edges.  
Rev. 1.3, 2007-05  
54  
07182006-DD60-22E6  
 复制成功!