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HYB18TC1G800AF 参数 Datasheet PDF下载

HYB18TC1G800AF图片预览
型号: HYB18TC1G800AF
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位DDR2 SDRAM [1-Gbit DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 54 页 / 3010 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18TC1G[80/16]0AF  
1-Gbit DDR2 SDRAM  
Field  
Bits  
Type1)  
Description  
CL  
[6:4]  
w
CAS Latency  
Note: All other bit combinations are illegal.  
011B CL 3  
100B CL 4  
101B CL 5  
110B CL 6  
111B CL 7  
BT  
BL  
3
w
w
Burst Type  
0B  
1B  
BT Sequential  
BT Interleaved  
[2:0]  
Burst Length  
Note: All other bit combinations are illegal.  
010B BL 4  
011B BL 8  
1) w = write only register bits  
2) Number of clock cycles for write recovery during auto-precharge. WR in clock cycles is calculated by dividing tWR (in ns) by tCK (in ns) and  
rounding up to the next integer: WR [cycles] tWR (ns) / tCK (ns). The mode register must be programmed to fulfill the minimum requirement  
for the analogue tWR timing WRMIN is determined by tCK.MAX and WRMAX is determined by tCK.MIN  
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TABLE 12  
Extended Mode Register Definition (BA[2:0] = 001B)  
Field  
Bits  
Type1)  
Description  
Bank Address [2]  
Note: BA2 not available on 256 Mbit and 512 Mbit components  
0B BA2 Bank Address  
Bank Address [1]  
BA2  
16  
reg. addr.  
BA1  
BA0  
15  
14  
0B  
BA1 Bank Address  
Bank Address [0]  
0B  
BA0 Bank Address  
Rev. 1.11, 2006-09  
15  
03292006-PJAE-UQLG  
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