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HYB18T256400AFL-3.7 参数 Datasheet PDF下载

HYB18T256400AFL-3.7图片预览
型号: HYB18T256400AFL-3.7
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 时钟动态存储器双倍数据速率内存集成电路
文件页数/大小: 63 页 / 3597 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/I]18T256[40/80/16]0A[C/F](L)  
256-Mbit Double-Data-Rate-Two SDRAM  
5.2  
DC Characteristics  
TABLE 21  
Recommended DC Operating Conditions (SSTL_18)  
Symbol  
Parameter  
Rating  
Min.  
Unit  
Note  
Typ.  
Max.  
1)  
VDD  
Supply Voltage  
1.7  
1.8  
1.9  
V
V
V
V
V
1)  
VDDDL  
VDDQ  
VREF  
VTT  
Supply Voltage for DLL  
Supply Voltage for Output  
Input Reference Voltage  
Termination Voltage  
1.7  
1.8  
1.9  
1)  
1.7  
1.8  
1.9  
2)3)  
4)  
0.49 × VDDQ  
0.5 × VDDQ  
VREF  
0.51 × VDDQ  
V
REF – 0.04  
VREF + 0.04  
1)  
VDDQ tracks with VDD, VDDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDDL tied together.  
2) The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to  
be about 0.5 × VDDQ of the transmitting device and VREF is expected to track variations in VDDQ  
3) Peak to peak ac noise on VREF may not exceed ± 2% VREF (dc)  
.
4)  
V
TT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to VREF, and  
must track variations in die dc level of VREF  
.
TABLE 22  
ODT DC Electrical Characteristics  
Parameter / Condition  
Symbol Min. Nom. Max. Unit Note  
1)  
Termination resistor impedance value for EMRS(1)[A6,A2] = [0,1]; 75 Ohm Rtt1(eff) 60  
Termination resistor impedance value for EMRS(1)[A6,A2] =[1,0]; 150 Ohm Rtt2(eff) 120  
75  
150  
50  
90  
Ω
Ω
Ω
%
1)  
180  
60  
1)2)  
3)  
Termination resistor impedance value for EMRS(1)(A6,A2)=[1,1]; 50 Ohm  
Deviation of VM with respect to VDDQ / 2  
Rtt3(eff) 40  
delta VM –6.00  
+6.00  
1) Measurement Definition for Rtt(eff): Apply VIH(ac) and VIL(ac) to test pin separately, then measure current I(VIHac) and I(VILac) respectively.  
Rtt(eff) = (VIH(ac) – VIL(ac)) /(I(VIHac) – I(VILac)).  
2) Optional for DDR2-400, DDR2-533 and DDR2-667, mandatory for DDR2-800.  
3) Measurement Definition for VM: Turn ODT on and measure voltage (VM) at test pin (midpoint) with no load: delta VM = ((2 x VM / VDDQ) –  
1) x 100%  
TABLE 23  
Input and Output Leakage Currents  
Symbol  
Parameter / Condition  
Min.  
Max.  
Unit  
Note  
1)  
IIL  
Input Leakage Current; any input 0 V < VIN < VDD  
Output Leakage Current; 0 V < VOUT < VDDQ  
–2  
–5  
+2  
+5  
μA  
μA  
2)  
IOL  
1) All other pins not under test = 0 V  
2) DQ’s, LDQS, LDQS, UDQS, UDQS, DQS, DQS, RDQS, RDQS are disabled and ODT is turned off  
Rev. 1.50, 2007-12  
28  
03062006-7M17-PXBC  
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