Internet Data Sheet
HY[B/I]18T1G[40/80/16]0C2[C/F](L)
1-Gbit Double-Data-Rate-Two SDRAM
1
Overview
This chapter gives an overview of the 1-Gbit Double-Data-Rate-Two SDRAM product family and describes its main
characteristics.
1.1
Features
The 1-Gbit Double-Data-Rate-Two SDRAM offers the following key features:
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1.8 V ± 0.1 V Power Supply
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Off-Chip-Driver impedance adjustment (OCD) and
On-Die-Termination (ODT) for better signal quality
Auto-Precharge operation for read and write bursts
Auto-Refresh, Self-Refresh and power saving Power-
Down modes
1.8 V ± 0.1 V (SSTL_18) compatible I/O
DRAM organizations with 4,8,16 data in/outputs
Double Data Rate architecture:
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– two data transfers per clock cycle
– eight internal banks for concurrent operation
Programmable CAS Latency: 3, 4, 5, 6, 7 and 8
Programmable Burst Length: 4 and 8
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Operating temperature range 0 °C to 95 °C
Industrial temperature range -40 °C to 95 °C
Average Refresh Period 7.8 μs at a TCASE lower
than 85 °C, 3.9 μs between 85 °C and 95 °C
Programmable self refresh rate via EMRS2 setting
Programmable partial array refresh via EMRS2 settings
DCC enabling via EMRS2 setting
Full and reduced Strength Data-Output Drivers
1KB page size for ×4 and ×8, 2KB page size for ×16
Packages: PG-TFBGA-60, PG-TFBGA-84, P-TFBGA-84,
P-TFBGA-60
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Differential clock inputs (CK and CK)
Bi-directional, differential data strobes (DQS and DQS) are
transmitted / received with data. Edge aligned with read
data and center-aligned with write data.
DLL aligns DQ and DQS transitions with clock
DQS can be disabled for single-ended data strobe
operation
Commands entered on each positive clock edge, data and
data mask are referenced to both edges of DQS
Data masks (DM) for write data
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All Speed grades faster than DDR2–400 comply with
DDR2–400 timing specifications when run at a clock rate
of 200 MHz.
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Posted CAS by programmable additive latency for better
command and data bus efficiency
Rev. 1.60, 2008-08
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09262007-3YK7-BKKG