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HYB18M256320CF-6/7.5 参数 Datasheet PDF下载

HYB18M256320CF-6/7.5图片预览
型号: HYB18M256320CF-6/7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用程序 [DRAMs for Mobile Applications]
分类和应用: 动态存储器
文件页数/大小: 26 页 / 1614 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/E]18M256[16/32]0CF  
256-Mbit DDR Mobile-RAM  
1.3  
Description  
The HY[B/E]18M256[16/32]0CF is a high-speed CMOS, dynamic random-access memory containing 268,435,456 bits. It is  
internally configured as a quad-bank DRAM.  
The HY[B/E]18M256[16/32]0CF uses a double-data-rate architecture to achieve high-speed operation. The double-data-rate  
architecture is essentially a 2n pre fetch architecture, with an interface designed to transfer two or four data words per clock  
cycle at the I/O pins. A single READ or WRITE access for the HY[B/E]18M256[16/32]0CF consists of a single 2n-bit wide, one  
clock cycle data transfer at the internal DRAM core and two corresponding n-bit wide, one-half clock cycle data transfers at the  
I/O pins.  
The HY[B/E]18M256[16/32]0CF is especially designed for mobile applications. It operates from a 1.8V power supply. Power  
consumption in self refresh mode is drastically reduced by an On-Chip Temperature Sensor (OCTS); it can further be reduced  
by using the programmable Partial Array Self Refresh (PASR).  
A conventional data-retaining Power-Down (PD) mode is available as well as a non-data-retaining Deep Power-Down (DPD)  
mode. For further power-savings the clock may be stopped during idle periods.  
The HY[B/E]18M256[16/32]0CF is housed in a BGA package. It is available in Standard (-0°C to +70°C) and Extended (-25°C  
to +85°C) temperature ranges.  
Rev.1.44, 2007-07  
6
06262007-JK8G-48BV