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HYB18M256320CF 参数 Datasheet PDF下载

HYB18M256320CF图片预览
型号: HYB18M256320CF
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用程序 [DRAMs for Mobile Applications]
分类和应用: 动态存储器
文件页数/大小: 26 页 / 1614 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HY[B/E]18M256[16/32]0CF  
256-Mbit DDR Mobile-RAM  
2.1  
Register Definition  
Mode Register  
2.1.1  
The Mode Register is used to define the specific mode of operation of the DDR Mobile-RAM. This definition includes the  
selection of a burst length (bits A0-A2), a burst type (bit A3) and a CAS latency (bits A4-A6). The Mode Register is programmed  
via the MODE REGISTER SET command (with BA0 = 0 and BA1 = 0) and will retain the stored information until it is  
programmed again or the device loses power.  
The Mode Register must be loaded when all banks are idle, and the controller must wait the specified time before initiating any  
subsequent operation. Violating either of these requirements results in unspecified operation.  
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.  
Full page bursts wrap within the page if the boundary is reached. Please note that full page bursts do not self-terminate; this  
implies that full-page read or write bursts with Auto Precharge are not legal commands. Full page burst has to start from an  
even column address.  
Mode Register Definition (BA[1:0] = 00B)  
%$ꢈ %$ꢃ  
$PD[ꢋꢋꢋ±ꢋꢋꢋ$ꢅ  
$ꢉ  
$ꢂ  
&/  
$ꢄ  
$ꢁ  
%7  
$ꢀ  
$ꢈ  
%/  
$ꢃ  
03%/ꢃꢈꢀꢃ  
Field Bits  
Type Description  
CL  
[6:4]  
w
CAS Latency  
010B CL 2  
011B CL 3  
Note: All other bit combinations are RESERVED.  
BT  
BL  
3
w
w
Burst Type  
0B  
1B  
BT Sequential  
BT Interleaved  
[2:0]  
Burst Length  
001B BL 2  
010B BL 4  
011B BL 8  
100B BL 16  
111B BL Full page (Sequential burst type only)  
Note: All other bit combinations are RESERVED.  
Reserved address bits  
A
[Amax:7]  
w
Note: Amax = A12 for x16, A11 for x32  
Rev.1.44, 2007-07  
06262007-JK8G-48BV  
9