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HYB18L256160BCX-7.5 参数 Datasheet PDF下载

HYB18L256160BCX-7.5图片预览
型号: HYB18L256160BCX-7.5
PDF下载: 下载PDF文件 查看货源
内容描述: DRAM的移动应用256兆移动-RAM [DRAMs for Mobile Applications 256-Mbit Mobile-RAM]
分类和应用: 存储内存集成电路动态存储器时钟
文件页数/大小: 48 页 / 1590 K
品牌: QIMONDA [ QIMONDA AG ]
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HY[B/E]18L256160B[C/F]X-7.5  
256-Mbit Mobile-RAM  
Functional Description  
2.4.5.3  
READ - DQM Operation  
DQM may be used to suppress read data and place the output buffers into High-Z state. The generic timing  
parameters as listed in Table 10 also apply to this DQM operation. The read burst in progress is not affected and  
will continue as programmed.  
#,+  
2%!$  
./0  
./0  
./0  
./0  
./0  
./0  
./0  
#OMMAN  
RESS  
"A !ꢏ  
#OL N  
!
T$1:  
$1-  
$1  
$/ N  
$/ Nꢔꢁ  
$/ Nꢔꢆ  
ꢒ $ONgT #ARE  
"A !ꢏ #OL N BANK !ꢏ COLUMN N  
$/ N ꢒ $ATA /UT FROM COLUMN N  
#, ꢒ ꢁ IN THE CASE SHOWNꢐ  
$1- REA LATENCY T$1: IS CLOCK CYCLES  
Figure 20 READ Burst - DQM Operation  
2.4.5.4  
READ to WRITE  
A READ burst may be followed by or truncated with a WRITE command. The WRITE command can be performed  
to the same or a different (active) bank. Care must be taken to avoid bus contention on the DQs; therefore it is  
recommended that the DQs are held in High-Z state for a minimum of 1 clock cycle. This can be achieved by either  
delaying the WRITE command, or suppressing the data-out from the READ by pulling DQM HIGH two clock cycles  
prior to the WRITE command, as shown in Figure 21. With the registration of the WRITE command, DQM acts as  
a write mask: when asserted HIGH, input data will be masked and no write will be performed.  
#,+  
2%!$  
./0  
./0  
./0  
./0  
72)4%  
./0  
./0  
#OMMAN  
RESS  
"A !ꢏ  
#OL N  
"A !ꢏ  
#OL B  
!
$1-  
#,ꢒꢁ  
(IGH:  
$/ N  
$/ Nꢔꢀ  
$) B  
$) Bꢔꢀ  
$) Bꢔꢁ  
$1  
$1  
#,ꢒꢆ  
(IGH:  
$/ N  
$) B  
$) Bꢔꢀ  
$) Bꢔꢁ  
ꢒ $ONgT #ARE  
"A !ꢏ #OL N Bꢍ ꢒ BANK !ꢏ COLUMN N Bꢍ  
$/ N ꢒ $ATA /UT FROM COLUMN Nꢕ $) B ꢒ $ATA )N TO COLUMN Bꢕ  
$1- IS ASSERTE ()'( TO SET $1S TO (IGH: STATE FOR CLOCK CYCLE PRIOR TO THE 72)4% COMMAN ꢐ  
Figure 21 READ to WRITE Timing  
Data Sheet  
22  
Rev. 1.11, 2007-01  
07142005-CR47-RB2E  
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