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HYB18H256321BF-10 参数 Datasheet PDF下载

HYB18H256321BF-10图片预览
型号: HYB18H256321BF-10
PDF下载: 下载PDF文件 查看货源
内容描述: 256兆GDDR3图形内存GDDR3图形内存 [256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM]
分类和应用: 双倍数据速率
文件页数/大小: 41 页 / 2032 K
品牌: QIMONDA [ QIMONDA AG ]
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Internet Data Sheet  
HYB18H256321BF  
256-Mbit GDDR3  
4.6  
Pin Capacitances  
TABLE 13  
Pin Capacitances (VDDQ = 1.8 V, TA = 25°C, f = 1 MHz)  
Parameter  
Symbol  
Min.  
Max.  
Unit  
Note  
Input capacitance:  
CI,CCK  
1.0  
2.5  
pF  
A0-A11, BA0-1, CKE, CS, CAS, RAS, WE, CKE, RES,CLK,CLK  
Input capacitance:  
CIO  
2.0  
3.0  
pF  
DQ0-DQ31, RDQS0-RDQS3, WDQS0-WDQS3, DM0-DM3  
4.7  
Driver current characteristics  
4.7.1  
Driver IV characteristics at 40 Ohms  
Figure 14 represents the driver Pull-Down and Pull-Up IV characteristics under process, voltage and temperature best and  
worst case conditions. The actual Driver Pull-Down and Pull-Up current must lie between these two bounding curves. The value  
of the external ZQ resistor is 240 Ω, setting the nominal driver output impedance to 40 Ω.  
FIGURE 14  
40 Ohm Driver Pull-Down and Pull-Up Characteristics  
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Table 14 lists the numerical values of the minimum and maximum allowed values of the output driver Pull-Down and Pull-Up  
IV characteristics.  
Rev. 0.80, 2007-09  
26  
09132007-07EM-7OYI  
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