P4C116/P4C116L
DATA RETENTION CHARACTERISTICS (P4C116L Military Temperature Only)
Typ.*
2.0VCC 3.0V
Max
2.0V CC 3.0V
Symbol
Parameter
Test Conditons
Min
Unit
V
=
V
=
V
VDR
VCC for Data Retention
Data Retention Current
2.0
ICCDR
tCDR
10
15
600
900
µA
ns
CE ≥ VCC –0.2V,
VIN ≥ VCC –0.2V
or VIN ≤ 0.2V
Chip Deselect to
0
Data Retention Time
§
†
tR
Operation Recovery Time
tRC
ns
*TA = +25°C
§tRC = Read Cycle Time
† This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Temperature
Symbol
Parameter
Unit
Range
–10
180
N/A
–12
170
N/A
–35
140
150
–15
160
170
–20
155
160
–25
150
155
Commercial
Military
mA
mA
ICC
Dynamic Operating Current*
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
–12
–20
–25
–10
–35
Max
Min
–15
Sym.
Parameter
Unit
Min
Max
Min
Max
Min
Max
Max
Min
Max
Min
tRC
Read Cycle Time
15
12
20
25
35
ns
ns
ns
10
tAA
tAC
Address Access Time
15
15
20
20
35
35
12
12
25
25
10
10
Chip Enable Access Time
tOH
tLZ
Output Hold from Address Change
Chip Enable to Output in Low Z
2
2
2
2
2
2
2
2
2
3
2
3
ns
ns
tHZ
Chip Disable to Output in High Z
Output Enable Low to Data Valid
10
15
5
6
6
8
7
10
8
10
15
20
ns
ns
ns
tOE
tOLZ
tOHZ
tPU
tPD
Output Enable Low to Low Z
0
0
0
0
0
0
0
0
0
0
0
0
Output Enable High to High Z
Chip Enable to Power Up Time
Chip Disable to Power Down
6
7
12
20
8
9
15
25
ns
ns
ns
15
20
12
10
Document # SRAM110 REV A
Page 3 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
