P4C116/P4C116L
MAXIMUM RATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
TBIAS
Temperature Under
Bias
–55 to +125
°C
VCC
Power Supply Pin with
Respect to GND
–0.5 to +7
V
TSTG
PT
IOUT
Storage Temperature
Power Dissipation
DC Output Current
–65 to +150
°C
W
mA
Terminal Voltage with
Respect to GND
(up to 7.0V)
–0.5 to
VTERM
TA
VCC +0.5
V
1.0
50
Operating Temperature –55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING CONDITIONS
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)
(2)
Grade
Ambient Temp
Gnd
Vcc
Symbol
CIN
Parameter
Input Capacitance VIN = 0V
Conditions Typ. Unit
Commercial
0°C to 70°C
0V 5.0V ±10%
5
pF
Military
-55°C to +125°C
0V 5.0V ±10%
COUT
Output Capacitance VOUT= 0V
7
pF
DC ELECTRICAL CHARACTERISTICS
Over recommended operating temperature and supply voltage(2)
P4C116
Min
P4C116L
Symbol
Parameter
Test Conditions
Unit
Max
Min
Max
Input High Voltage
2.2
–0.5(3)
V
CC +0.5
2.2
–0.5(3)
VCC +0.5
VIH
V
V
V
V
V
VIL
VHC
VLC
Input Low Voltage
0.8
0.8
VCC –0.2 VCC +0.5 VCC –0.2 VCC +0.5
–0.5(3)
CMOS Input High Voltage
CMOS Input Low Voltage
Input Clamp Diode Voltage
0.2
–1.2
–0.5(3)
0.2
–1.2
VCD
VOL
VCC = Min., IIN = –18 mA
IOL = +8 mA, VCC = Min.
Output Low Voltage
0.4
0.4
V
(TTL Load)
Output High Voltage
(TTL Load)
VOH
ILI
IOH = –4 mA, VCC = Min.
V
2.4
2.4
V
CC = Max.
VIN = GND to VCC
CC = Max., CE = VIH,
Mil.
Com’l.
–10
–5
+10
+5
–5
+5
µA
Input Leakage Current
n/a
n/a
–10
–5
+10
+5
–5
+5
µA
V
Mil.
Com’l.
ILO
Output Leakage Current
n/a
n/a
VOUT = GND to VCC
___
___
___
___
CE ≥ VIH,
VCC= Max,
f = Max., Outputs Open
Mil.
Ind./Com’l.
30
20
20
n/a
mA
Standby Power Supply
ISB
Current (TTL Input Levels)
___
___
___
___
15
10
CE ≥ VHC,
VCC= Max,
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ VHC
Mil.
Ind./Com’l.
mA
1
n/a
Standby Power Supply
Current
ISB1
(CMOS Input Levels)
n/a = Not Applicable
Document # SRAM110 REV A
Page 2 of 14
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
