欢迎访问ic37.com |
会员登录 免费注册
发布采购

P4C1024-55C4M 参数 Datasheet PDF下载

P4C1024-55C4M图片预览
型号: P4C1024-55C4M
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 128KX8, 55ns, CMOS, CDIP32, 0.400 INCH, SIDE BRAZED, CERAMIC, DIP-32]
分类和应用: 静态存储器内存集成电路
文件页数/大小: 14 页 / 923 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
 浏览型号P4C1024-55C4M的Datasheet PDF文件第1页浏览型号P4C1024-55C4M的Datasheet PDF文件第2页浏览型号P4C1024-55C4M的Datasheet PDF文件第4页浏览型号P4C1024-55C4M的Datasheet PDF文件第5页浏览型号P4C1024-55C4M的Datasheet PDF文件第6页浏览型号P4C1024-55C4M的Datasheet PDF文件第7页浏览型号P4C1024-55C4M的Datasheet PDF文件第8页浏览型号P4C1024-55C4M的Datasheet PDF文件第9页  
P4C1024  
POWER DISSIPATION CHARACTERISTICS VS. SPEED  
Temperature  
Range  
Symbol  
Parameter  
-15 -20 -25 -35 -45 -55 -70 -85 -100 -120 Unit  
Commercial  
190 160 150 145 N/A N/A N/A N/A N/A N/A mA  
N/A 175 165 160 155 N/A N/A N/A N/A N/A mA  
N/A 150 140 135 130 125 115 110 105 100 mA  
Dynamic  
Operating  
Current*  
ICC  
Industrial  
Military  
*VCC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE1 = VIL, CE2 = VIH, OE = VIH  
DATA RETENTION CHARACTERISTICS (P4C1024L, Military Temperature Only)  
Typ.*  
VCC=  
2.0V  
Max  
VCC=  
2.0V  
Symbol  
Parameter  
Test Condition  
Min  
Unit  
3.0V  
3.0V  
VDR  
VCC for Data Retention  
Data Retention Current  
2.0  
V
ICCDR  
50  
200  
400  
600  
µA  
CE1 VCC – 0.2V or  
CE2 0.2V, VIN VCC – 0.2V  
or VIN 0.2V  
tCDR  
Chip Deselect to  
ns  
ns  
0
Data Retention Time  
Operation Recovery Time  
§
tR  
tRC  
*TA = +25°C  
§
tRC = Read Cycle Time  
This parameter is guaranteed but not tested.  
DATA RETENTION WAVEFORM  
Document # SRAM124 REV C  
Page 3 of 14