P4C1023/P4C1023L
CAPACITANCES(4)
(VCC = 5.0V, TA = 25°C, f = 1.0 MHz)
Symbol
Parameter
Input Capacitance
Unit
pF
Test Conditions
VIN = 0V
Max
7
CIN
VOUT = 0V
9
COUT
Output Capacitance
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Note 1
Temperature
Range
Symbol
Parameter
Unit
-55
-70
Commercial
Industrial
Military
20
20
ICC
25
35
25
35
mA
Dynamic Operating Current
Note 1 - Tested with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e., CE2 ≥ VIH (min), CE1 and WE ≤ VIL (max), OE is high. Switching
inputs are 0V and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
-70
-55
Parameter
Unit
ns
Symbol
Max
Min
55
Max
Min
70
tRC
Read Cycle Time
Address Access Time
tAA
55
55
70
70
ns
Chip Enable Access
Time
ns
tAC
tOH
Output Hold from
ns
ns
5
5
Address Change
Chip Enable to
Output in Low Z
tLZ
10
10
Chip Disable to
Output in High Z
tHZ
25
35
ns
ns
20
30
Output Enable Low
to Data Valid
tOE
Output Enable Low to
Low Z
tOLZ
5
0
5
0
ns
ns
ns
ns
Output Enable High
to High Z
tOHZ
tPU
20
55
25
70
Chip Enable to Power
Up Time
Chip Disable to
tPD
Power Down Time
Document # SRAM126 REV OR
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