February 2007
rev 0.3
ASM3P1819N
DC Electrical Characteristics
(Test condition: All parameters are measured at room temperature (+25°C) unless otherwise stated)
Symbol
VIL
Parameter
Min
Typ
Max
Unit
V
Input Low voltage
Input High voltage
Input Low current
Input High current
VSS – 0.3
-
-
0.8
VIH
2.0
VDD + 0.3
V
IIL
-
-
-20.0
µA
µA
mA
mA
V
IIH
-
-
-
1.0
IXOL
IXOH
VOL
VOH
XOUT Output low current @ 0.4V, VDD = 3.3V
XOUT Output high current @ 2.5V, VDD = 3.3V
Output Low voltage VDD = 3.3V, IOL = 20mA
Output High voltage VDD = 3.3V, IOH = 20mA
3
3
-
-
-
-
-
0.4
2.5
-
-
V
Dynamic Supply current
7.1
26.9
ICC
-
mA
3.3V and 10pF probe loading
fIN - min
fIN - max
IDD
VDD
tON
Static Supply current
-
-
-
-
4.5
3.3
-
-
-
-
mA
V
Operating Voltage
Power up time (First locked clock cycle after power up)
Clock Output impedance
0.18
50
mS
Ω
ZOUT
AC Electrical Characteristics
Symbol
Parameter
Min
20
20
Typ
-
-
Max
40
40
Unit
MHz
MHz
fIN
fOUT
Input Frequency
Output Frequency
Output Rise time
1
tLH
-
-
0.69
0.66
-
-
nS
nS
( Measured from 0.8V to 2.0V )
Output Fall time
1
tHL
( Measured from 2.0V to 0.8V )
tJC
tD
Jitter (Cycle to Cycle)
Output Duty cycle
-200
45
-
50
200
55
pS
%
Note:1. tLH and tHL are measured into a capacitive load of 15pF
Low Power Mobile VGA EMI Reduction IC
3 of 7
Notice: The information in this document is subject to change without notice.
PULSECORE [ PulseCore Semiconductor ]
