January 2006
rev 0.2
Power Supply Characteristics
Symbol
I
CCL
I
CCH
∆I
CC
ASM2P20807A
Parameter
Quiescent
Power
Supply Current TTL
Inputs HIGH
Power Supply Current
per Input HIGH
Dynamic Power Supply
Current per Output
3
Total Power
Current
4
Supply
Test Conditions
1
V
CC
= Max
V
IN
= GND or V
CC
V
CC
= Max
V
IN
= V
CC
-0.6V
V
CC
= 2.7V and 15 pF load
150 MHz
V
CC
= Max.
C
L
= 12pF
All outputs toggling
fi = 150MHz
V
IN
= V
CC
V
IN
= GND
V
IN
= V
CC
–0.6V
V
IN
= GND
Min
-
Typ
2
0.1
Max
20
Unit
µA
-
45
300
µA
I
CCD
-
40
-
µA
/MHz
I
C
-
105
125
mA
-
105
125
NOTES:
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 2.5V, +25°C ambient.
3. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.
4. I
C
= IQUIESCENT + IINPUTS + IDYNAMIC
I
C
= I
CC
+
∆I
CC
DHNT + I
CCD
(fi)
I
CC
= Quiescent Current (I
CCL
, I
CCH
and I
CCZ
)
∆I
CC
= Power Supply Current for a TTL High Input (V
IN
= V
CC
-0.6V)
D
H
= Duty Cycle for TTL Inputs High
N
T
= Number of TTL Inputs at DH
I
CCD
= Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
fi = Input Frequency
2.5V CMOS 1-TO-10 CLOCK DRIVER
Notice: The information in this document is subject to change without notice.
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PULSECORE [ PulseCore Semiconductor ]
