PE64906
Product Specification
Table 1. Electrical Specifications @ 25°C, V
DD
= 2.75V (In shunt configuration, RF- connected to GND)
Parameter
Operating frequency
Minimum capacitance
(C
min
)
Maximum capacitance
(C
max
)
Tuning ratio
Step size
Quality factor at C
min1
Quality factor at C
max1
Self resonant frequency
Harmonics
2
IMD3
Third order intercept point
(IP3)
Switching time
3,4
Start-up time
3
Wake-up time
3,4
State = 00000, 100 MHz
State = 11111, 100 MHz
C
max
/C
min
, 100 MHz
5 bits (32 states), 100 MHz
698 - 960 MHz, with L
S
removed
1710 - 2170 MHz, with L
S
removed
698 - 960 MHz, with L
S
removed
1710 - 2170 MHz, with L
S
removed
State 00000
State 11111
2fo, 3fo: 698 - 915 MHz; P
IN
= +34 dBm, 50Ω
2fo, 3fo: 1710 - 1910 MHz; P
IN
= +32 dBm, 50Ω
Bands I,II,V/VIII, +20 dBm CW @ TX freq,
-15 dBm CW @ 2TX-RX freq, 50Ω
Shunt configuration derived from IMD3 spec
IP3 = (2P
TX
+ P
block
- IMD3) / 2
State change to 10/90% delta capacitance between any two states
Time from V
DD
within specification to all performances within specification
State change from Standby mode to RF state to all performances within specification
65
12
70
70
Condition
Min
100
0.81
4.14
0.9
4.6
5.1:1
0.119
40
40
29
13
7.9
2.8
-36
-36
-105
GHz
dBm
dBm
dBm
dBm
µs
µs
µs
pF
Typ
Max
3000
0.99
5.06
Unit
MHz
pF
pF
Notes: 1. Q for a shunt DTC based on a series RLC equivalent circuit
Q = X
C
/ R = (X - X
L
) / R, where X = X
L
+ X
C
, X
L
= 2*pi*f*L, X
C
= -1 / (2*pi*f*C), which is equal to removing the effect of parasitic inductance L
S
2. In shunt between 50Ω ports. Pulsed RF input with 4620 µS period, 50% duty cycle, measured per 3GPP TS 45.005
3. DC path to ground at RF– must be provided to achieve specified performance
4. State change activated on falling edge of SEN following data word
©2013 Peregrine Semiconductor Corp. All rights reserved.
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Document No. DOC-30114-3
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