PE42556
Product Specification
Table 6. Mechanical Specifications
Parameter
Die Size, Drawn (x,y)
Die Size, Singulated (x,y)
Wafer Thickness
Wafer Size
Ball Pitch
Ball Height
Ball Diameter
UBM Diameter
85
72.25
1080 x 1980
180
Minimum
Typical
996 x 1896
1100 x 2000
200
150
400
85
110
90
95
97.75
1150 x 2050
220
Maximum
Units
μm
μm
µm
mm
μm
μm
μm
μm
Typical
Test Conditions
As drawn
Including excess sapphire, max. tolerance
= -20/+50
μm
RoHS compliant lead-free solder balls
Solder ball composition: 95.5%Sn/3.5%Ag/ 1.0%Cu
Table 7. Bump Coordinates
Bump #
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Bump Name
VSS
DGND
GND4
RF2
GND3
RFC
GND1
RF1
GND2
LS
VDD
CTRL
DGND
DGND
Bump Center (µm)
X
400
400
400
400
400
0
-400
-400
-400
-400
-400
0
0
0
Y
850
450
50
-350
-750
-750
-750
-350
50
450
850
850
450
50
Figure 18. Pad Layout (Bumps Up)
Vdd
CTRL
Vss
11
LS
2000
μm
-20/+50
μm
12
D-GND
1
D-GND
10
GND
13
DGND
2
GND
9
RF1
14
3
RF2
8
GND
RFC
4
GND
7
6
5
1100
μm
-20/+50
μm
Singulated Die size: 1.1 X 2.0 mm (400 µm ball pitch)
All bump locations originate from the die center and refer to the
center of the bump.
Ball pitch is 400 µm.
©2009-2012 Peregrine Semiconductor Corp. All rights reserved.
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Document No. 70-0289-06
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