InnoSwitch-CH
Conditions
SOURCE = 0 V
TJI = -40 °C to +125 °C
Parameter
Symbol
Min
Typ
Max
Units
(Unless Otherwise Specified)
Circuit Protection (cont.)
Reduced Current Limit,
0.84 ×
1.18 ×
I2f = ILIMITred(TYP)2 × fOSC(TYP)
INN20x3-20x5
INN20x3-20x5
I2f
I2f
I2f
I2f
See Note A
A2Hz
Power Coefficient
I2f
Increased Current Limit,
0.84 ×
1.18 ×
I2f = ILIMITinc(TYP)2 × fOSC(TYP)
I2f
I2f
See Note A
TJ = 25 °C
See Note A
0.75 ×
ILIMIT(TYP)
Initial Current Limit
IINIT
tLEB
tILD
mA
ns
Leading Edge
Blanking Time
TJ = 25 °C
See Note A
170
250
TJ = 25 °C
See Note A, F
Current Limit Delay
Thermal Shutdown
170
ns
TSD
See Note A
See Note A
135
142
75
150
9.6
°C
°C
Thermal Shutdown
Hysteresis
TSD(H)
PRIMARY BYPASS Pin
Shutdown Threshold
Current
ISD
5.6
7.6
3.0
mA
V
Primary Bypass
Power-Up Reset
Threshold Voltage
VBPP(RESET)
TJ = 25 °C
2.8
64
3.3
90
Auto-Restart On-Time
at fOSC
TJ = 25 °C
See Note G
tAR
77
1
ms
s
Auto-Restart Trigger
Skip Time
TJ = 25 °C
See Note A, G
tAR(SK)
Auto-Restart Off-Time
at fOSC
TJ = 25 °C
See Note G
tAR(OFF)
2
s
Short Auto-Restart
Off-Time at fOSC
TJ = 25 °C
See Note A, G
tAR(OFF)SH
0.5
s
Output
TJ = 25 °C
3.50
5.50
2.30
3.60
1.70
2.70
4.10
6.30
2.70
4.20
2.00
3.10
INN20x3
ID = 750 mA
TJ = 100 °C
See Note A
TJ = 25 °C
INN20x4
ID = 850 mA
Ω
ON-State Resistance
RDS(ON)
TJ = 100 °C
See Note A
TJ = 25 °C
INN20x5
ID = 1050 mA
TJ = 100 °C
See Note A
VBPP = 6.2 V, VDS = 520 V, TJ = 125 °C
See Note H
OFF-State Drain
Leakage Current
IDSS1
200
mA
18
Rev. J 10/17
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