MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
160
120
80
–5.0
–4.0
–3.0
–2.0
–1.0
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
VGS = –4V
–10V
ID = –24A
–10A
40
–6A
–3A
–4
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5
0
–2
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
102
7
5
VDS = 10V
Pulse Test
Tc = 25°C
VDS = –10V
Pulse Test
3
2
Tc =25°C 75°C 125°C
101
7
5
VDS = –10V
Pulse Test
3
2
–4
0
100
0
–2
–4
–6
–8
–10
–5 –7–100 –2 –3 –5 –7–101 –2 –3 –5
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
3
Ciss
2
td(off)
tf
100
7
5
103
7
5
tr
3
2
3
2
td(on)
Coss
Crss
10–1
Tch = 25°C
VDD = –15V
VGS = –10V
RGEN = RGS = 50Ω
7
5
102
7
VGS = 0V
f = 1MHZ
Tch = 25°C
3
2
5
3
2
10–2
–5–7–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3
–100
–2 –3
–5 –7–101
–2 –3
–5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
