MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –3A, VGS = –10V
ID = –1.5A, VGS = –4V
ID = –3A, VGS = –10V
ID = –3A, VDS = –10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.5
70
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.5
—
–2.0
57
mΩ
mΩ
V
—
102
–0.17
8
160
–0.21
—
—
—
S
Ciss
—
2100
340
195
20
—
pF
pF
pF
ns
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
20
—
ns
VDD = –15V, ID = –1.5A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
135
50
—
ns
Fall time
—
—
ns
IS = –1.7A, VGS = 0V
Channel to ambient
VSD
Source-drain voltage
Thermal resistance
—
–0.77
—
–1.20
69.4
—
V
Rth (ch-a)
trr
—
°C/W
ns
IS = –1.7A, dis/dt = 50A/µs
Reverse recovery time
—
70
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
2.5
2.0
1.5
1.0
0.5
0
–102
–7
–5
–3
–2
tw =
1ms
–101
–7
–5
–3
–2
10ms
–100
–7
–5
100ms
Tc = 25°C
–3
–2
Single Pulse
–10–1
–7
DC
–5
–3
–2
–10–2
0
50
100
150
200
–10–2 –2 –3 –5–7–10–1–2 –3 –5–7 –100 –2 –3 –5–7 –101 –2 –3 –5–7 –102
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–50
–40
–30
–20
–10
0
–20
VGS = –10V
PD = 1.8W
–8V –6V
VGS = –10V
–8V
–5V
–4V
PD = 1.8W
Tc = 25°C
Pulse Test
–16
–12
–8
–4
0
–6V
–5V
–4V
Tc = 25°C
Pulse Test
–3V
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
