MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
V
GS = 0V
Tch = 25°C
= –20A
Pulse Test
I
D
V
DS =
–10V
–20V
–25V
TC =
25°C
75°C
125°C
0
4
8
12
16
(nC)
20
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
ID = –1mA
I
D
= 1/2I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = –1mA
3
2
101
7
5
D = 1.0
0.5
0.2
3
2
P
DM
100
7
5
tw
0.1
0.05
0.02
0.01
T
tw
D
=
3
2
T
Single Pulse
10–1
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
