MITSUBISHI Pch POWER MOSFET
FX20KMJ-03
HIGH-SPEED SWITCHING USE
FX20KMJ-03
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
E
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
1
2
3
3
4V DRIVE
•
1
2
3
GATE
DRAIN
SOURCE
VDSS ............................................................... –30V
•
1
rDS (ON) (MAX) ................................................ 0.13Ω
ID .................................................................... –20A
•
•
2
Integrated Fast Recovery Diode (TYP.) ...........50ns
•
Viso ................................................................................ 2000V
•
TO-220FN
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
–30
±20
V
–20
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
IDA
–80
A
L = 10µH
–20
A
IS
–20
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
ISM
–80
A
PD
20
W
°C
°C
V
Tch
–55 ~ +150
–55 ~ +150
2000
2.0
Tstg
Viso
—
AC for 1minute, Terminal to case
Typical value
Weight
g
Jan.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
