MITSUBISHI Nch POWER MOSFET
FS22SM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
40
32
24
16
8
TC
= 125°C
VGS = 0V
Pulse Test
Tch = 25°C
= 22A
ID
25°C
75°C
VDS = 100V
200V
400V
4
0
0
0
40
80
120
160
200
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5
5.0
4.0
3.0
2.0
1.0
0
V
DS = 10V
= 1mA
V
GS = 10V
= 1/2I
Pulse Test
I
D
I
D
D
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
1.4
1.2
1.0
0.8
0.6
0.4
V
GS = 0V
5
I
D = 1mA
3
2
100
7
D=1
0.5
5
3
P
DM
2
0.2
0.1
10–1
7
tw
T
tw
T
5
0.05
D=
3
0.02
2
0.01
Single Pulse
10–2
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
