MITSUBISHI Nch POWER MOSFET
FS22SM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
0.5
0.4
0.3
0.2
40
32
24
16
8
T
C
= 25°C
Pulse Test
T
C
= 25°C
Pulse Test
V
GS = 10V
20V
I
D
= 40A
30A
20A
10A
0.1
0
0
0
4
8
12
16
20
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
102
7
5
V
DS = 10V
T
C
= 25°C
DS = 50V
Pulse Test
Pulse Test
V
3
2
101
7
5
T
C
= 25°C
75°C
150°C
3
2
0
100
0
4
8
12
16
20
100
2
3
5 7 101
2
3
5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
7
5
103
7
5
Tch = 25°C
V
V
R
DD = 200V
GS = 10V
Ciss
3
2
t
d(off)
GEN = RGS = 50Ω
3
2
103
7
5
102
7
5
tf
3
2
Coss
Crss
t
d(on)
tr
102
7
3
2
Tch = 25°C
f = 1MHz
5
3
2
V
GS = 0V
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
100
2
3
5 7 101
2
3
5 7 102
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
POWEREX [ POWEREX POWER SEMICONDUCTORS ]
