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TISPL758LF3D 参数 Datasheet PDF下载

TISPL758LF3D图片预览
型号: TISPL758LF3D
PDF下载: 下载PDF文件 查看货源
内容描述: 集成对称和非对称双向过电压保护器适用于朗讯科技L7581 / 2/3线卡接入交换机 [INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES]
分类和应用:
文件页数/大小: 9 页 / 181 K
品牌: POINN [ POWER INNOVATIONS LTD ]
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TISPL758LF3D  
INTEGRATED SYMMETRICAL AND ASYMMETRICAL BIDIRECTIONAL OVERVOLTAGE  
PROTECTORS FOR LUCENT TECHNOLOGIES L7581/2/3 LINE CARD ACCESS SWITCHES  
JANUARY 1998 - REVISED OCTOBER 1998  
device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the  
overvoltage to be safely diverted through the device. For negative surges, the high crowbar holding current  
prevents d.c. latchup with the SLIC current, as the surge current subsides. The TISPL758LF3 is guaranteed  
to voltage limit and withstand the listed international lightning surges in both polarities.  
These protection devices are supplied in a small-outline surface mount (D) plastic package. The difference  
between the TISPL758LF3D and TISPL758LF3DR versions is shown in the ordering information.  
absolute maximum ratings, T = 25°C (unless otherwise noted)  
A
RATING  
SYMBOL  
VALUE  
UNIT  
Repetitive peak off-state voltage  
R-G terminals  
-180, +105  
-105, +105  
VDRM  
V
T-G terminals  
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)  
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)  
8/20 µs (ANSI C62.41, 1.2/50 µs voltage wave shape)  
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)  
5/200 µs (VDE 0433, 2.0 kV, 10/700 µs voltage wave shape)  
0.2/310 µs (I3124, 2.0 kV, 0.5/700 µs voltage wave shape)  
5/310 µs (ITU-T K20/21, 2.0 kV, 10/700 µs voltage wave shape)  
5/310 µs (FTZ R12, 2.0 kV, 10/700 µs voltage wave shape)  
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)  
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)  
Non-repetitive peak on-state current (see Notes 1, 2 and 3)  
full sine wave  
175  
120  
60  
50  
ITSP  
A
50  
50  
50  
45  
35  
50 Hz  
60 Hz  
16  
20  
ITSM  
A
Repetitive peak on-state current, 50/60 Hz, (see Notes 2 and 3)  
ITSM  
diT/dt  
TJ  
2x1  
A
A/µs  
°C  
Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 70 A  
150  
Junction temperature  
-40 to +150  
-40 to +150  
Storage temperature range  
Tstg  
°C  
NOTES: 1. Above the maximum specified temperature, derate linearly to zero at 150°C lead temperature.  
2. Initially the TISPL758LF3 must be in thermal equilibrium with 0°C < TJ <70°C.  
3. The surge may be repeated after the TISPL758LF3 returns to its initial conditions.  
recommended operating conditions  
MIN  
20  
0
TYP  
MAX  
UNIT  
R1  
R1  
Series Resistor for GR-1089-CORE  
Series Resistor for FCC Part 68  
first-level surge, operational pass (4.5.7)  
10/160 non-operational pass  
10/160 operational pass  
W
18  
0
W
W
10/560 non-operational pass  
10/560 operational pass  
10  
0
Series Resistor for ITU-T K20/21  
10/700, < 2 kV, operational pass  
10/700, 4 kV, operational pass  
R1  
40  
P R O D U C T  
I N F O R M A T I O N  
2
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