TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
electrical characteristics for the T and R terminals, T = 25°C (continued)
J
TISP4180F3
PARAMETER
TEST CONDITIONS
UNIT
V
MIN
TYP
MAX
V(BO) Breakover voltage
dv/dt = ±250 V/ms, RSOURCE = 300 W
±180
Impulse breakover volt- dv/dt = ±1000 V/µs, RSOURCE = 50 W,
V(BO)
±198
V
age
di/dt < 20 A/µs
I(BO)
VT
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
dv/dt = ±250 V/ms, RSOURCE = 300 W
IT = ±5 A, tW = 100 µs
di/dt = +/-30 mA/ms
±0.15
±0.6
±3
A
V
A
IH
±0.15
±5
Linear voltage ramp
dv/dt
ID
kV/µs
Maximum ramp value < 0.85V(BR)MIN
VD = ±50 V
±10
95
µA
pF
pF
pF
V
D = 0,
55
30
15
f = 100 kHz, Vd = 100 mV
(see Note 5)
Coff
Off-state capacitance
VD = -5 V
50
VD = -50 V
25
NOTE 5: Further details on capacitance are given in the Applications Information section.
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
TEST CONDITIONS
Ptot = 0.8 W, TA = 25°C
5 cm2, FR4 PCB
D Package
160
105
RqJA
Junction to free air thermal resistance
°C/W
SL Package
PARAMETER MEASUREMENT INFORMATION
+i
Quadrant I
ITSP
Switching
Characteristic
ITSM
IT
V(BO)
VT
I(BO)
IH
V(BR)
I(BR)
V(BR)M
IDRM
VDRM
VD
ID
+v
-v
ID
VD
VDRM
I(BR)
V(BR)
IDRM
V(BR)M
IH
I(BO)
VT
V(BO)
IT
ITSM
Quadrant III
ITSP
Switching
Characteristic
-i
PMXXAA
Figure 1. VOLTAGE-CURRENT CHARACTERISTIC FOR T AND R TERMINALS
ALL MEASUREMENTS ARE REFERENCED TO THE R TERMINAL
P R O D U C T
I N F O R M A T I O N
3
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