TISP4125F3, TISP4150F3, TISP4180F3
SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
MARCH 1994 - REVISED SEPTEMBER 1997
absolute maximum ratings
RATING
‘4125F3
Repetitive peak off-state voltage (0°C < T
J
< 70°C)
Non-repetitive peak on-state pulse current (see Notes 1, 2 and 3)
1/2 µs (Gas tube differential transient, open-circuit voltage wave shape 1/2 µs)
2/10 µs (FCC Part 68, open-circuit voltage wave shape 2/10 µs)
8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)
10/160 µs (FCC Part 68, open-circuit voltage wave shape 10/160 µs)
5/200 µs (VDE 0433, open-circuit voltage wave shape 2 kV, 10/700 µs)
0.2/310 µs (RLM 88, open-circuit voltage wave shape 1.5 kV, 0.5/700 µs)
5/310 µs (CCITT IX K17/K20, open-circuit voltage wave shape 2 kV, 10/700 µs)
5/310 µs (FTZ R12, open-circuit voltage wave shape 2 kV, 10/700 µs)
10/560 µs (FCC Part 68, open-circuit voltage wave shape 10/560 µs)
10/1000 µs (REA PE-60, open-circuit voltage wave shape 10/1000 µs)
Non-repetitive peak on-state current (see Notes 2 and 3)
50 Hz,
1s
Initial rate of rise of on-state current,
Junction temperature
Storage temperature range
D Package
SL Package
Linear current ramp, Maximum ramp value < 38 A
I
TSM
di
T
/dt
T
J
T
stg
I
TSP
350
175
120
60
50
38
50
50
45
35
4
6
250
-40 to +150
-40 to +150
A rms
A/µs
°C
°C
A
‘4150F3
‘4180F3
V
DRM
SYMBOL
VALUE
± 100
± 120
± 145
V
UNIT
NOTES: 1. Further details on surge wave shapes are contained in the Applications Information section.
2. Initially the TISP must be in thermal equilibrium with 0°C < T
J
<70°C. The surge may be repeated after the TISP returns to its initial
conditions.
3. Above 70°C, derate linearly to zero at 150°C lead temperature.
electrical characteristics for the T and R terminals, T
J
= 25°C
TISP4125F3
PARAMETER
Repetitive peak off-
state current
Breakover voltage
age
Breakover current
On-state voltage
Holding current
Critical rate of rise of
off-state voltage
Off-state current
Off-state capacitance
TEST CONDITIONS
MIN
TYP
MAX
±10
±125
±143
±0.15
±0.15
±5
±10
V
d
= 100 mV
V
D
= 0,
V
D
= -5 V
V
D
= -50 V
55
30
15
95
50
25
55
30
15
±0.6
±3
±0.15
±5
±10
95
50
25
±0.15
±168
±0.6
±3
MIN
TISP4150F3
TYP
MAX
±10
±150
UNIT
I
DRM
V
(BO)
V
(BO)
I
(BO)
V
T
I
H
dv/dt
I
D
C
off
NOTE
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
R
SOURCE
= 50
Ω,
di/dt < 20 A/µs
dv/dt = ±250 V/ms, R
SOURCE
= 300
Ω
I
T
= ±5 A, t
W
= 100 µs
di/dt = +/-30 mA/ms
Linear voltage ramp
Maximum ramp value < 0.85V
(BR)MIN
V
D
= ±50 V
f = 100 kHz,
(see Note 4)
µA
V
V
A
V
A
kV/µs
µA
pF
pF
pF
Impulse breakover volt- dv/dt = ±1000 V/µs,
4: Further details on capacitance are given in the Applications Information section.
electrical characteristics for the T and R terminals, T
J
= 25°C
PARAMETER
I
DRM
Repetitive peak off-
state current
TEST CONDITIONS
V
D
= ±V
DRM
, 0°C < T
J
< 70°C
TISP4180F3
MIN
TYP
MAX
±10
UNIT
µA
PRODUCT
INFORMATION
2
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