TIPL760, TIPL760A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
T
C
= 125°C
T
C
= 25°C
T
C
= -65°C
V
CE
= 5 V
V
CE(sat)
- Collector-Emitter Saturation Voltage - V
100
TCP741AA
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
TCP741AB
T
C
= 25°C
T
C
= 100°C
4·0
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
h
FE
- Typical DC Current Gain
3·0
10
2·0
1·0
1·0
0·1
0
1·0
I
C
- Collector Current - A
10
0
0·5
1·0
I
B
- Base Current - A
1·5
2·0
Figure 3.
Figure 4.
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·25
V
BE(sat)
- Base-Emitter Saturation Voltage - V
T
C
= 25°C
TCP741AC
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
10
TCP741AP
1·15
I
CES
- Collector Cut-off Current - µA
1·0
TIPL760A
V
CE
= 1000 V
0·1
1·05
0·95
TIPL760
V
CE
= 850 V
0·01
0·85
I
C
= 4 A
I
C
= 3 A
I
C
= 2 A
I
C
= 1 A
0
0·2
0·4
0·6
0·8
1·0
1·2
1·4
1·6
0·75
I
B
- Base Current - A
0·001
-60
-30
0
30
60
90
120
T
C
- Case Temperature - °C
Figure 5.
Figure 6.
PRODUCT
INFORMATION
4
POINN [ POWER INNOVATIONS LTD ]
