TIPL760 参数 Datasheet PDF下载

TIPL760, TIPL760A

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

V

CEO(sus)

Collector-emitter

sustaining voltage

Collector-emitter

cut-off current

Collector cut-off

current

Emitter cut-off

current

Forward current

transfer ratio

Collector-emitter

saturation voltage

Base-emitter

saturation voltage

Current gain

bandwidth product

Output capacitance

I

C

=

10 mA

TEST CONDITIONS

L = 25 mH

V

BE

= 0

V

BE

= 0

V

BE

= 0

V

BE

= 0

I

B

= 0

I

B

= 0

I

C

= 0

I

C

= 0.5 A

I

C

= 2.5 A

I

C

=

I

C

=

I

C

=

I

C

=

4A

4A

4A

4A

(see Notes 3 and 4)

T

C

= 100°C

(see Notes 3 and 4)

T

C

= 100°C

f=

1 MHz

12

110

(see Notes 3 and 4)

20

T

C

= 100°C

T

C

= 100°C

(see Note 2)

TIPL760

TIPL760A

TIPL760

TIPL760A

TIPL760

TIPL760A

TIPL760

TIPL760A

MIN

400

450

50

50

200

200

50

50

1

60

1.0

2.5

5.0

1.2

1.4

1.3

MHz

pF

V

V

µA

mA

µA

TYP

MAX

UNIT

V

V

CE

= 850 V

I

CES

V

CE

= 1000 V

V

CE

= 850 V

V

CE

= 1000 V

I

CEO

I

EBO

h

FE

V

CE

= 400 V

V

CE

= 450 V

V

EB

=

V

CE

=

I

B

=

I

B

=

I

B

=

I

B

=

I

B

=

I

B

=

V

CE

=

V

CB

=

10 V

5V

0.5 A

0.8 A

0.8 A

0.5 A

0.8 A

0.8 A

10 V

20 V

V

CE(sat)

I

C

= 2.5 A

V

BE(sat)

f

t

C

ob

I

C

= 0.5 A

I

E

= 0

f = 0.1 MHz

NOTES: 2. Inductive loop switching measurement.

3. These parameters must be measured using pulse techniques, t

p

= 300 µs, duty cycle

≤

2%.

4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

thermal characteristics

PARAMETER

R

θ

JC

Junction to case thermal resistance

MIN

TYP

MAX

1.56

UNIT

°C/W

inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

t

sv

t

rv

t

fi

t

ti

t

xo

t

sv

t

rv

t

fi

t

ti

t

xo

†

TEST CONDITIONS

†

MIN

TYP

MAX

2.5

300

UNIT

µs

ns

ns

ns

ns

µs

ns

ns

ns

ns

Voltage storage time

Voltage rise time

Current fall time

Current tail time

Cross over time

Voltage storage time

Voltage rise time

Current fall time

Current tail time

Cross over time

I

C

= 4 A

V

BE(off)

= -5 V

I

B(on)

= 0.8 A

T

C

= 100°C

(see Figures 1 and 2)

I

C

= 4 A

V

BE(off)

= -5 V

I

B(on)

= 0.8 A

(see Figures 1 and 2)

250

150

400

3

500

250

150

750

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

PRODUCT

INFORMATION

2