TIC226 SERIES
SILICON TRIACS
APRIL 1971 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
HOLDING CURRENT
GATE FORWARD VOLTAGE
vs
vs
GATE FORWARD CURRENT
CASE TEMPERATURE
TC01AD
TC01AC
1000
100
10
10
VAA = ± 12 V
IG = 0
Initiating ITM = 100 mA
Vsupply
+
-
1
0·1
1
IA = 0
TC = 25 °C
QUADRANT 1
0·001
0·1
0·01
-60 -40 -20
0
20
40
60
80 100 120
0·0001
0·01
0·1
1
TC - Case Temperature - °C
IGF - Gate Forward Current - A
Figure 3.
Figure 4.
LATCHING CURRENT
vs
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
CASE TEMPERATURE
TC01AE
TI01AA
1000
100
10
100
10
1
Vsupply IGTM
VAA = ± 12 V
T
C £ 85 °C
+
+
-
+
-
-
-
+
No Prior Device Conduction
Gate Control Guaranteed
1
-60 -40 -20
0
20
40
60
80 100 120
1
10
100
1000
TC - Case Temperature - °C
Consecutive 50-Hz Half-Sine-Wave Cycles
Figure 5.
Figure 6.
P R O D U C T
I N F O R M A T I O N
3
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