TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
IT
W
6
VG
VA
DUT
10%
tgt
RG
G
VG
VA
IG
90%
PMC1AA
Figure 1. Gate-controlled turn-on time
30 V
m
0.1
F
W
6
R2
R1
m
to 0.5
F
NOTES: A. Resistor R1 is adjusted for the specified value
of IRM
.
B. Resistor R2 value is 30/IH, where IH is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
IA
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
tP = 50 µs to 300 µs
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
VA
DUT
TH1
RG
RG
G1
G2
VK
VG1
VG2
(IRM Monitor)
IG
IG
³
pulse amplitude, VG, of 20 V and duration of
10 µs to 20 µs.
W
0.1
G2 tP Synchronisation
VG1
VG2
IT
tP
IA
0
IRM
VA
VT
0
tq
PMC1AB
Figure 2. Circuit-commutated turn-off time
P R O D U C T
I N F O R M A T I O N
3
POINN [ POWER INNOVATIONS LTD ]
