TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
IDRM
VD = rated VDRM
RGK = 1 kW
TC = 110°C
TC = 110°C
400
mA
IRRM
IGT
VR = rated VRRM
VAA = 6 V
IG = 0
1
1
mA
mA
RL = 100 W
RL = 100 W
RGK = 1 kW
RL = 100 W
RGK = 1 kW
RL = 100 W
RGK = 1 kW
tp(g) ³ 20 ms
0.2
VAA = 6 V
TC = - 40°C
1.2
tp(g) ³ 20 µs
VAA = 6 V
VGT
Gate trigger voltage
Holding current
0.4
0.2
0.6
1
V
tp(g) ³ 20 µs
VAA = 6 V
TC = 110°C
TC = - 40°C
tp(g) ³ 20 µs
VAA = 6 V
R
GK = 1 kW
15
10
Initiating IT = 20 mA
VAA = 6 V
IH
mA
R
GK = 1 kW
Initiating IT = 20 mA
Peak on-state
voltage
VTM
ITM = 5 A
(see Note 6)
1.7
V
Critical rate of rise of
off-state voltage
dv/dt
VD = rated VD
RGK = 1 kW
TC = 110°C
80
V/µs
NOTE 6: This parameter must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
3.5
°C/W
°C/W
62.5
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Gate-controlled
turn-on time
tgt
tq
IT = 5 A
IT = 5 A
IG = 10 mA
See Figure 1
See Figure 2
2.9
µs
Circuit-commutated
turn-off time
IRM = 8 A
13.3
µs
P R O D U C T
I N F O R M A T I O N
2
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