TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
PARAMETER MEASUREMENT INFORMATION
30 V
6
Ω
I
T
V
G
V
A
R
G
G
V
G
I
G
V
A
90%
PMC1AA
DUT
10%
t
gt
Figure 1. Gate-controlled turn-on time
30 V
6
Ω
0.1
µ
F
to 0.5
µ
F
R2
I
A
V
A
DUT
R
G
G1
V
G1
I
G
0.1
Ω
V
K
(I
RM
Monitor)
R1
TH1
R
G
I
G
V
G2
NOTES: A. Resistor R1 is adjusted for the specified value
of I
RM
.
B. Resistor R2 value is 30/I
H
, where I
H
is the
holding current value of thyristor TH1.
C. Thyristor TH1 is the same device type as the
DUT.
D. Pulse Generators, G1 and G2, are
synchronised to produce an on-state anode
current waveform with the following
characteristics:
t
P
= 50 µs to 300 µs
G2
duty cycle = 1%
E. Pulse Generators, G1 and G2, have output
pulse amplitude, V
G
, of
≥
20 V and duration of
10 µs to 20 µs.
G2 t
P
Synchronisation
V
G1
V
G2
I
T
I
A
t
P
0
I
RM
V
A
V
T
0
t
q
PMC1AB
Figure 2. Circuit-commutated turn-off time
PRODUCT
INFORMATION
3
POINN [ POWER INNOVATIONS LTD ]
