TIC108 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 6 V
V
AA
= 6 V
t
p(g)
≥
20 µs
V
GT
Gate trigger voltage
V
AA
= 6 V
t
p(g)
≥
20 µs
V
AA
= 6 V
t
p(g)
≥
20 µs
V
AA
= 6 V
I
H
Holding current
Initiating I
T
= 20 mA
V
AA
= 6 V
Initiating I
T
= 20 mA
V
TM
dv/dt
NOTE
Peak on-state
voltage
Critical rate of rise of
off-state voltage
I
TM
= 5 A
V
D
= rated V
D
(see Note 6)
R
GK
= 1 kΩ
T
C
= 110°C
80
R
GK
= 1 kΩ
TEST CONDITIONS
R
GK
= 1 kΩ
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
L
= 100
Ω
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
C
= - 40°C
T
C
= 110°C
0.4
0.2
15
mA
10
1.7
V
V/µs
0.6
T
C
= 110°C
T
C
= 110°C
t
p(g)
≥
20
µs
T
C
= - 40°C
0.2
MIN
TYP
MAX
400
1
1
1.2
1
V
UNIT
µA
mA
mA
6: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3.5
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
gt
t
q
Gate-controlled
turn-on time
Circuit-commutated
turn-off time
I
T
= 5 A
I
T
= 5 A
TEST CONDITIONS
I
G
= 10 mA
I
RM
= 8 A
See Figure 1
See Figure 2
MIN
TYP
2.9
13.3
MAX
UNIT
µs
µs
PRODUCT
INFORMATION
2
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