BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS110AB
TCS110AD
20000
10000
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
1·5
1·0
0·5
1000
TC = -40°C
TC = 25°C
VCE
=
3 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
0·5
0
0·5
1·0
5·0
1·0
5·0
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS110AC
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
5·0
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
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