BDT61, BDT61A, BDT61B, BDT61C
NPN SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BDT61
60
80
Collector-emitter
BDT61A
BDT61B
BDT61C
BDT61
V(BR)CEO
IC
=
30 mA
IB = 0
(see Note 3)
V
breakdown voltage
100
120
VCE
VCE
VCE
VCE
VCB
VCB
=
30 V
40 V
50 V
60 V
60 V
80 V
I
B = 0
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
Collector-emitter
cut-off current
=
=
=
=
=
IB = 0
IB = 0
IB = 0
BDT61A
BDT61B
BDT61C
BDT61
ICEO
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
BDT61A
BDT61B
BDT61C
BDT61
VCB = 100 V
VCB = 120 V
Collector cut-off
current
ICBO
mA
mA
VCB
VCB
VCB
VCB
=
=
=
=
30 V
40 V
50 V
60 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDT61A
BDT61B
BDT61C
Emitter cut-off
current
IEBO
hFE
VEB
VCE
IB
VCE
IE
=
=
5 V
3 V
IC = 0
5
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
IC = 1.5 A
IC = 1.5 A
IC = 1.5 A
IB = 0
(see Notes 3 and 4)
(see Notes 3 and 4)
(see Notes 3 and 4)
750
VCE(sat)
VBE(on)
VEC
=
6 mA
3 V
2.5
2.5
2
V
V
V
=
Parallel diode
forward voltage
=
1.5 A
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
MIN
TYP
MAX
UNIT
RqJC
RqJA
2.5
°C/W
°C/W
62.5
resistive-load-switching characteristics at 25°C case temperature
†
PARAMETER
TEST CONDITIONS
B(on) = 8 mA
RL = 20 W
TYP
MAX
UNIT
ton
toff
Turn-on time
Turn-off time
IC = 2 A
I
IB(off) = -8 mA
1
µs
µs
VBE(off) = -5 V
tp = 20 ms, dc £ 2%
4.5
†
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
P R O D U C T
I N F O R M A T I O N
2
POINN [ POWER INNOVATIONS LTD ]
