BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
COLLECTOR CURRENT
TCS130AB
TCS130AD
50000
10000
2·0
tp = 300 µs, duty cycle < 2%
IB = IC / 100
TC = -40°C
TC = 25°C
TC = 100°C
1·5
1·0
1000
TC = -40°C
TC = 25°C
VCE
=
3 V
tp = 300 µs, duty cycle < 2%
TC = 100°C
100
0·5
0·5
0·5
1·0
10
1·0
10
IC - Collector Current - A
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AC
3·0
2·5
2·0
1·5
1·0
0·5
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
1·0
10
IC - Collector Current - A
Figure 3.
P R O D U C T
I N F O R M A T I O N
3
POINN [ POWER INNOVATIONS LTD ]
