BD645, BD647, BD649, BD651
NPN SILICON POWER DARLINGTONS
MAY 1993 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
BD645
BD647
BD649
BD651
60
80
Collector-emitter
V(BR)CEO
IC
=
30 mA
IB = 0
(see Note 5)
V
breakdown voltage
100
120
VCE
VCE
VCE
VCE
VCB
VCB
=
30 V
40 V
50 V
60 V
60 V
80 V
IB = 0
0.5
0.5
0.5
0.5
0.2
0.2
0.2
0.2
2.0
2.0
2.0
2.0
Collector-emitter
cut-off current
=
=
=
=
=
IB = 0
IB = 0
IB = 0
ICEO
mA
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
IE = 0
VCB = 100 V
VCB = 120 V
Collector cut-off
current
ICBO
mA
mA
VCB
VCB
VCB
VCB
=
=
=
=
40 V
50 V
60 V
70 V
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
Emitter cut-off
current
IEBO
hFE
VEB
VCE
=
=
5 V
3 V
IC = 0
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
(see Notes 5 and 6)
5
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Base-emitter
voltage
IC
=
3 A
750
IB
IB
=
=
12 mA
50 mA
IC
IC
=
=
3 A
5 A
2
VCE(sat)
VBE(sat)
VBE(on)
V
V
V
2.5
IB
=
50 mA
3 V
IC
IC
=
=
5 A
3 A
3
VCE
=
2.5
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle £ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
UNIT
RqJC
RqJA
2.0
°C/W
°C/W
62.5
P R O D U C T
I N F O R M A T I O N
2
POINN [ POWER INNOVATIONS LTD ]
