BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
10
SAS631AI
I
C
- Collector Current - A
1·0
0·1
BD539
BD539A
BD539B
BD539C
BD539D
10
100
1000
0·01
1·0
V
CE
- Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
50
P
tot
- Maximum Power Dissipation - W
TIS631AC
40
30
20
10
0
0
25
50
75
100
125
150
T
C
- Case Temperature - °C
Figure 5.
PRODUCT
INFORMATION
4