BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
JUNE 1973 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
BD539
V
(BR)CEO
Collector-emitter
breakdown voltage
BD539A
I
C
= 30 mA
(see Note 4)
V
CE
= 40 V
I
CES
Collector-emitter
cut-off current
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
CE
= 120 V
I
CEO
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
V
CE
= 30 V
V
CE
= 60 V
V
CE
= 90 V
V
EB
=
V
CE
=
V
CE
=
V
CE
=
5V
4V
4V
4V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
I
B
= 0
I
B
= 0
I
B
= 0
I
C
= 0
I
C
= 0.5 A
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
I
C
=
1A
3A
1A
3A
5A
3A
(see Notes 4 and 5)
f = 1 kHz
f = 1 MHz
20
3
(see Notes 4 and 5)
(see Notes 4 and 5)
40
30
12
0.25
0.8
1.5
1.25
V
V
I
B
= 0
BD539B
BD539C
BD539D
BD539
BD539A
BD539B
BD539C
BD539D
BD539/539A
BD539B/539C
BD539D
MIN
40
60
80
100
120
0.2
0.2
0.2
0.2
0.2
0.3
0.3
0.3
1
mA
mA
mA
V
TYP
MAX
UNIT
I
EBO
h
FE
I
B
= 125 mA
I
B
= 375 mA
I
B
=
V
CE
=
1A
4V
V
CE(sat)
V
BE(on)
h
fe
V
CE
= 10 V
V
CE
= 10 V
I
C
= 0.5 A
I
C
= 0.5 A
|
h
fe
|
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
2.78
62.5
UNIT
°C/W
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
t
on
t
off
†
TEST CONDITIONS
I
C
= 1 A
V
BE(off)
= -4.3 V
I
B(on)
= 0.1 A
R
L
= 30
Ω
†
MIN
I
B(off)
= -0.1 A
t
p
= 20 µs, dc
≤
2%
TYP
0.5
2
MAX
UNIT
µs
µs
Turn-on time
Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
2
POINN [ POWER INNOVATIONS LTD ]
