PixArt Imaging Inc.
ADNS-7530 Integrated Molded Lead-Frame DIP Sensor
Optical/Electrical Characteristics (at Tc = 5°C to 45°C):
VCSEL Die Source Marking
Parameter
V = A,V
Min
V = C
Min
Symbol
λ
Typ
Max
Typ
Max Units Notes
Peak Wavelength
832
865
832
865
nm
Maximum Radiant
Power
LOPmax
4.5
4.0
mW Maximum output power under
any condition. This is not a rec-
ommended operating condition
and does not meet eye safety
requirements.
Wavelength Temperature
Coefficient
dλ/dT
dλ/dI
0.065
0.21
15
0.065
0.3
nm/
ºC
Wavelength Current
Coefficient
nm/
mA
Beam Divergence
θFW@1/
e^2
16
deg
Threshold Current
Slope Efficiency
Forward Voltage
Notes:
Ith
SE
VF
4.2
0.4
2.1
3.0
mA
0.35
2.1
W/A
2.4
2.4
V
At 500uW output power
1. VCSELs are sorted into bins as specified in the power adjustment procedure. Appropriate binning register data values are used in the application
circuit to achieve the target output power. The VCSEL binning is marked on the integrated molded lead-frame DIP sensor package.
2. When driven with current or temperature range greater than specified in the power adjustment procedure section, eye safety limits may be
exceeded. The VCSEL should then be treated as a Class IIIb laser and as a potential eye hazard.
3. Over driving beyond LOPmax limit will cause the VCSEL to enter into an unstable region. Any LOP that exceeds this limit should not be taken as a
valid reference point in the laser power calibration process.
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PixArt Imaging Inc.
E-mail: fae_service@pixart.com.tw
11
PIXART [ PIXART IMAGING INC. ]
